Lead-Free Piezoelectric Ceramic Micro-Pressure Thick Films
نویسندگان
چکیده
In this study, non-stoichiometry lead-free piezoelectric ceramic Li0.058(K0.48Na0.535)0.966(Nb0.9Ta0.1)O3 (LKNNT) thick films were deposited on Pt/Ti/Si substrates using spin-coating method technology to form a LKNNT/Pt/Ti/Si structure of the micro-pressure films. Additionally, influence crystalline properties, surface microstructure images, and mechanical properties observed, analyzed, calculated X-ray diffraction (XRD), field-emission scanning electron microscopy (FE-SEM), focused ion beam (FIB) microscopy, nano-indention technology, other instruments. This study was divided into two parts: The first part investigation fabrication parameters bottom layer (Pt) buffer (Ti). structures achieved by DC sputtering method, then rapid thermal annealing (RTA) post-treatment process used re-arrange grains reduce defects in second part, powder prepared solid-state reaction acetic acid (C2H4O2) solvent added slurry for processing. parameters, film micro-structure, coefficient characteristics developed (LKNNT)/Pt/Ti/Si devices investigated. According experimental results, optimal processing an RTA temperature 500 °C, Ti buffer-layer thickness 273.9 nm, Pt electrode-layer 376.6 theoretical density LKNNT 4.789 g/cm3, lattice constant 3.968 × 10−8 cm, d33 value 150 pm/V. Finally, regarding when microforce 3 mN applied, revealed hardness 60 MPa, Young’s modulus 13 GPa, elasticity interval 1.25 μm, which are suitable future applications devices.
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ژورنال
عنوان ژورنال: Crystals
سال: 2023
ISSN: ['2073-4352']
DOI: https://doi.org/10.3390/cryst13020201